Evaluating the Performance Parameters of Triple Metal Dual Gate Vertical Tunnel FET Biosensor

This paper presents a triple metal dual-gate vertical TFET biosensor in order to identify the presence of various biomolecules which are present in the surroundings. The performance of the proposed biosensor is analyzed with the help of two-dimensional TCAD simulations. In the biosensing device, a hollow region is formed underneath the gate area, which gathers the biomolecules to be detected. The accumulated biomolecules in the cavity region lead to electrical changes in the device parameters. The effect of dielectric constant variation is investigated by analyzing the results obtained. Gate work function is also varied to find out its impact. The I
ON
/I
OFF
ratio and Subthreshold Swing (SS) are two performance characteristics that are investigated.