Electrical Characteristics of Dual Gate AlGaN/GaN High-Electron Mobility Transistors

The impacts of a dual gate structure on the performance indices of an AlGaN/GaN HEMT are studied in this work. The dual gate arrangement aids in the positive shift of the threshold voltage, resulting in typically off functioning. Compared to a single gate device, our proposed structure boosted the threshold voltage by 27.27 percent while simultaneously increasing the transconductance. The device has outstanding off-state properties, with very low leakage current and off-state power dissipation, outperforming the single gate configuration by a wide margin. Overall, dual gate technology will aid in pushing the threshold voltage towards a positive value while sacrificing just a small amount of current density.