An IGCT Electrical-thermal Unified Model Suitable for Simulation Software

Integrated Gate Commutated Thyristor (IGCT) is the core device of a new magnetic fusion power supply for CRAFT, which is very important to establish an accurate, suitable, and effective device model. In order to establish an electric-thermal unified model (ETUM) suitable for the simulation system, this paper analyzes the process of carrier motion in the process of IGCT turning on and off through the semiconductor mechanism of IGCT. The structure of the electrical model and the calculation method of related parameters are obtained by fitting the mathematical equations. Using standard passive components such as resistance, capacitance, inductance, and an accurate Bipolar Junction Transistor (BJT) model, converting the physical model to the electrical model can be realized. At the same time, because the physical model contains temperature parameters, compared with the traditional IGCT model, this model combines the thermal model with the electrical model, which makes the model unified. In this paper, the 4000A/4500V IGCT power device in ABB is taken as an example to verify the rationality of the electric-thermal model under different current and different temperatures through MATLAB/SIMULINK simulation and experimental test.