Silicide Ultrathin Impact Ionization MOS (SUTIMOS) for Ultra Low Power VLSI Application

In this article, Impact Ionization Metal Oxide Semiconductor (IMOS) device is investigated with silicide source material. A comparatively study of Silicide Ultrathin Impact Ionization MOS (SUTIMOS), with conventional IMOS and earlier proposed UTIMOS was also done based on the device parameters such as electric field, impact ionization rate, band diagram, and the current density. Effect of the schottky height of silicide material was also performed on the transfer and output characteristic of the device. All the study has been performed on the sentaurus 2D device simulator TCAD tool.