Diode characteristics of structures with a sub-micron size depth profile in diamond made by ion implantation

A structure with p-n-characteristic was made by ion-implantation on a CVD diamond film with high doses (2.0/spl times/10/sup 16/ cm/sup -2/ and 1.0/spl times/10/sup 17/ cm/sup -2/) at a high temperature (1200/spl deg/C) in a vacuum chamber. Boron and carbon were used for implantation for the p-layer and the n-layer respectively. After implantation the substrate was annealed in steps to the maximum temperature of 1200/spl deg/C. I-V-measurements from 25/spl deg/C to 400/spl deg/C on air were made after each annealing step to calculate the activation energy and to observe the characteristic of the curve and the current density. Especially the onset voltage in forward bias, the voltage in reverse bias and the current density were discussed. The implanted CVD film was characterized with Raman-spectroscopy. A comparison was made with former fabricated p-i-M sub-micron-size structures which were fabricated on CVD diamond (polycrystalline).