Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration

We demonstrate scaling of an enhancement-mode (E-mode) high-k GaN-on-300mm Si(111) NMOS transistor achieving best-in-class performance and figure-of-merits for integrated power electronics and RF mm-wave. Here, we demonstrate many firsts and industry records for GaN-on-Si, including record f
T
/f
MAX
of 300/400GHz and transconductance
$\mathrm{G}_{\mathrm{M}} > 2100 \mu\mathrm{S}/\mu \mathrm{m}$
with industry thinnest
$\mathrm{T}_{\text{OXE}}= 14.8 \mathrm{\AA}$
; record high
$\mathrm{V}_{\text{DS}}= 65\mathrm{V}$
for a 30nm channel length GaN transistor with excellent
$\mathrm{R}_{\text{ON}}= 495\Omega-\mu \mathrm{m}$
; first truly e-mode GaN achieving full ON-current with record low-gate-drive,
$\mathrm{V}_{\text{Gon}}= 1.8\mathrm{V}, \mathrm{I}_{\text{OFF}}= 25\text{pA}/\mu \mathrm{m}$
at
$\mathrm{V}_{\mathrm{D}}=30\mathrm{V}\ (\mathrm{V}_{\mathrm{G}}=0\mathrm{V})$
; high-Q MIM and inductor enabled by GaN industry's first 4-metal layer Cu backend interconnect process on 300mm silicon; outstanding RF performance: 24dBm RF output power
$(\mathrm{V}_{\mathrm{D}}= 10\mathrm{V}$
and high power density 2.7W/mm at 28GHz; 17.6dBm (0.72W/mm) with
$\text{PAE}=20.1\%$
at 76GHz, and 0.4W/mm with 10.5% PAE and 4.3dB gain at 90GHz. All these are accomplished on a highly uniform 300mm GaN process capable of tight threshold voltage variation
$(1\sigma)$
of 38mV across the wafer, setting an industry milestone for GaN-on-Si. Finally, inspired by Moore's law, as we look ahead to the future of GaN transistor technology, we show that it is possible to integrate GaN NMOS finfet
$(\mathrm{W}_{\text{fin}}=25\text{nm})$
, the narrowest GaN fin ever been demonstrated, and Si PMOS finfet
$(\mathrm{W}_{\text{fin}}=35\text{nm})$
technologies with matched V
TH
and drive ratio, by fabricating and demonstrating a low-leakage 3D-stacked GaN-Si CMOS inverter using the 3D layer transfer technology [1], [2].