A Self-Aligned Wafer-Scale Gate-All-Around Aperture Definition Method for Silicon Nanostructures

A novel fabrication technique is developed to deliver self-aligned gate structures on vertically aligned periodic silicon nanocones with gate aperture radii of 65±3 nm and a surface density of 1.6 billion structures cm^-2 across the 100 mm diameter substrate scale. The silicon nanocones were obtained by a combination of ion beam etching and thermal oxidation whereas the gate structures were obtained by a combination of ion beam etching planarization and selective wet chemical etching.