Towards the Integration of Hf0.8Zr0.2O2-based Negative Capacitance Dielectrics on $\beta$-Ga2O3 Substrates

As technology continues to move forward, the demand for smaller, more efficient radio frequency (RF) devices capable of operating at higher voltages, temperatures, and frequencies also increases. Devices made using the beta phase of gallium oxide (
$\beta$
-Ga
2
O
3
) have the potential to operate at a high voltage and temperature. Combining the capacitance enhancement available in negative capacitance (NC) ferroelectric dielectrics with the benefits of
$\beta$
-Ga
2
O
3
shows promise for the development of the next-generation RF devices. In this paper, we work towards the integration of ferroelectric Hf
0.8
Zr
0.2
O
2
films on
$\beta$
-Ga
2
O
3
and fabricate different capacitive structures. We characterize these capacitors using capacitance-voltage and polarization-voltage measurements and study the impact of annealing temperature on the polarization of the Hf
0.8
Zr
0.2
O
2
films. Results show that saturation polarization, remnant polarization, and capacitance of the ferroelectric film increase with higher annealing temperatures. Considering that temperature could be a key factor in the fabrication and operation of RF devices made with
$\beta$
-Ga
2
O
3
, our study paves the way for the integration of these NC-ferroelectric materials on
$\beta$
-Ga
2
O
3
.