GaInNAs/GaAs edge emitting lasers for the 1.3 to 1.5 /spl mu/m wavelength range

GaInAsN/AlGaAs laser structures have been investigated in the telecommunication wavelength range from 1.3 /spl mu/m to 1.5 /spl mu/m. The separate confinement heterostructure laser layers have been grown by molecular beam epitaxy with an RF nitrogen source. Broad area lasers at 1.3 /spl mu/m have threshold current densities of 780 A/cm/sup 2/. Ridge waveguide lasers with threshold currents of 21 mA and external efficiencies of 0.5 W/A have been realized. Using metal gratings along both sides of the ridge loss coupled distributed feedback lasers have been obtained with side mode suppression ratios above 40 dB. When the N-fraction is increased to about 5% the emission wavelength of the lasers is shifted to 1.5 /spl mu/m. GaInNAs laser data at 1.4 /spl mu/m and 1.5 /spl mu/m are reported.