Low threshold oxide-confined InAs quantum dash ridge waveguide lasers on InP substrates

Oxide-confined ridge waveguide semiconductor lasers with a new type of low-dimensional active region - the self-assembled InAs "quantum dash" - are demonstrated. The name "dash" comes from a physical description of what is essentially an InAs QD that is elongated in one crystalline direction. They have room-temperature operation wavelength of 1.57 /spl mu/m, a high injection efficiency of 87%, and a low threshold current density of 450 A/cm/sup 2/.