Temperature Stability of Dielectric Constant and Energy Storage Properties of (Pb1-x,Lax)(Zr0.65,Ti0.35)O3 Relaxor Ferroelectric Thin Films

Recently, dielectric energy storage materials and devices attracted much research interest due to its high-power density and the resulted applications. In this work, relaxor ferroelectric (Pb
1-x
,La
x
)(Zr
0.65
,Ti
0.35
)O
3
(abbreviated as PLZT100X, X = 0.06, 0.08, 0.10 and 0.12) thin films are deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method, and temperature stability of relative dielectric constant as well as energy storage density of the PLZT thin films with different level of La doping are studied. The relative dielectric constant of the PLZT10 thin films is 873 at 1 kHz at 30°C, with maximum of variation of 7.6% in the temperature range from 30–200 °C, which indicates very high temperature stability. The energy storage density of the PLZT thin films is 38.8 J/cm
³
, 42.2 J/cm
³
, 33.5 J/cm
³
and 36.0 J/cm
³
with the La doping of 0.06, 0.08, 0.10 and 0.12, respectively, under the applied electric field of 2840 kV/cm. The energy efficiency of the PLZT thin films is above 70%. In addition, the energy storage density of the PLZT thin films shows good temperature stability, with about 20 J/cm
³
around the electric field of 1800 kV/cm in the temperature range from 30–150 °C.