Density Gradient Based Quantum-Corrected 3D Drift-Diffusion Simulator for Nanoscale MOSFETs

In this work, we have developed a solver for the three-dimensional density gradient (DG) equation which is used to apply quantum corrections (QC) to the classical drift-diffusion (DD) simulator in a self-consistent manner. This module has been implemented in C++ using the finite volume method and has been incorporated into NESS (Nano-Electronic Simulation Software) which is being developed in the Device Modelling Group, University of Glasgow. Here, we summarise the implementation details and particularly highlight the impact of the three anisotropic DG masses, which are used as fitting parameters, on the charge profiles and current-voltage (I-V) characteristics in nano-transistors.