Crystalline-based silicon light-emitting diode

Room temperature electroluminescence from metal oxide-silicon structures with intermediate silicon oxide layer is observed. The tunnel-thin SiO/sub x/ layer is grown by chemical oxidation. Electroluminescence is observed on forward biased diodes. The electric pumping was realized by applying series short rectangular current pulses. Significant emission occurs around 1.07 eV at room temperature. The physical reason for the electroluminescence is discussed.