Phase shifters using (Ba,Sr)TiO/sub 3/ thin films on sapphire and glass substrates

In this paper, we present results from distributed phase shifter circuits that were fabricated on sapphire and glass substrates. The circuits employ voltage tunable (Ba,Sr)TiO/sub 3/ (BST) thin films deposited by rf magnetron sputtering. Both parallel-plate and interdigital capacitor structures are investigated. K/Ka-band phase shifters demonstrated a phase shift of 265/spl deg/ with an insertion loss of 5.8 dB at 20 GHz and 180/spl deg/ phase shift with an insertion loss of 4 dB at 30 GHz. Both circuits demonstrated a promising figure of merit /spl sim/60/spl deg//dB at 10 GHz. A C/X-band phase shifter demonstrated a phase shift of >460 degrees with an insertion loss of 8.8 dB at 8 GHz.