Dynamic dv/dt Control Strategy of SiC MOSFET for Switching Loss Reduction in the Operational Power Range

For silicon carbide power
mosfet
s, high
dv/dt
in switching may bring about a high level of electromagnetic interference. This letter shows that the
dv
/
dt
rate decreases at lower load currents. A dynamic
dv
/
dt
control strategy is then proposed for switching loss reduction in the whole operating range, by maintaining the
dv
/
dt
at the maximum acceptable level. The effectiveness of the proposed control strategy is verified by an experiment, showing that the total switching loss can be reduced by as much as 22% at 30% load. Furthermore, the simulation shows that a power loss reduction of 11.4% can be obtained for an electric vehicle converter which typically operates at light loads for most of the time.