Automated SiC MOSFET Power Module Switching Characterization Test Platform

To address the problems of large test error and low efficiency in switching characterization test of wide-bandgap (WBG) power semiconductor devices, an automated high accuracy switching performance test platform for SiC MOSFET power module is proposed. This paper focuses on optimizing the design of hardware and software which can efficiently, accurately and safely obtain switching characteristics parameters of SiC MOSFET power module by double pulse test (DPT), as well as short-circuit test and body diode reverse recovery test to acquire more comprehensive switching behaviors of the devices under test (DUT). Real-time test results can be achieved. The multi-process test is serial, and the test data can be compared and managed using a database system. The design principles are experimentally verified by testing the Cree 1.2kV SiC MOSFET power module.