Short-circuit Protection Circuit of SiC MOSFET Based on Drain-source Voltage Integral

The short-circuit withstand time of SiC MOSFET is only $2-7\mu \mathrm{s}$, which is much shorter than that of Si IGBT, therefore, the short-circuit detection circuit must respond fast and have high bandwidth. According to the short-circuit characteristic of SiC MOSFET that the short-circuit withstand time decreases with the increase of DC bus voltage, a short-circuit protection circuit based on drain-source voltage integral is proposed in this paper to realize the self-adapting short-circuit protection, namely, the higher the DC bus voltage is, the faster the short-circuit protection action is. Further, the experimental platform is built and the experimental results under different DC bus voltage levels are given to verify the rapidness and effectiveness of the proposed short-circuit protection circuit. Finally, the conclusion is drawn. This paper provides a new choice for short-circuit protection of SiC MOSFETs.