15kV Press Pack SiC IGBT

Press pack is easier to use in series and has a short circuit failure mode, which makes it especially suitable for the application requirements of high voltage and high power devices in the power system. The SiC IGBT device itself has the characteristics of high voltage, high temperature and high power density. The application of press pack SiC IGBT devices will greatly promote the technological innovation of power electronics technology. This article gives a solution for press pack SiC IGBTs, and the 15kV SiC IGBT press pack module sample is prepared based on 15kV SiC IGBT chips independently developed by this research group. The static and switching characteristics of the module are tested, and the test results show that the module has good conduction characteristics and a low leakage current of 24.7µA at 15kV.