Broadband High Power Amplifier Design Using GaN HEMT Technology

This paper presents the design and measurements of a broadband GaN HEMT power amplifier intended for point-to-point radios, electronic warfare systems, and test and measurement applications. The proposed power amplifier is fabricated, and small/large-signal measurements are collected. Fabricated design is conducted for an input power of 26 dBm and obtained between 39.6 - 40.9 dBm output power. Power added efficiency (PAE) of 45.9 % to 61.4 % is reached over the band (0.5 - 2.5 GHz). In this study, Wolfspeed’s CGH40010F transistor is used in CW mode. In order to decide optimum source and load impedances of the transistor, load- & source-pull simulations are conducted. After load- & source-pull simulations, proper source and load matching networks are established to obtain optimum output power and efficiency values over the band.