A New Foundry-Based Open-Gate Junction Field-Effect Transistor (OG-JFET) as Electronic Sensing Platform (ESP) for Life Science Applications

An electronic sensor platform based on ionsensitive open-gate junction field-effect-transistors (OG-JFET) is introduced for life science applications. OG-JFET is fabricated by an established and mass-producible method. A thin layer (1.6 µm) of p-type silicon is epitaxially grown on thick (450 µm) n-type silicon to create a vertical p-n junction. The p-type layer serves as the main channel with two ohmic contacts as the source and drain. OG-JFET in our design showed a sensitivity of 52.12 mV/pH and 16 mV hysteresis with a 3 µA/hour drift rate. Also, a COMSOL Multiphysics model is introduced for efficient design of OG-JFET.Based on the experimental results and simulation studies, here we present for the first-time biosensing applications using the OG-JFET multi-user platform.