Fabrication and Characterization of ZrO2/AlGaN/GaN MIS-HEMTs with regrown AlGaN Layer

We have fabricated and characterized ZrO2/AlGaN/GaN MIS-HEMTs with a 1-nm-thick AlGaN layer regrown on top of the original AlGaN barrier layer. Capacitance-voltage characteristics revealed spill-over phenomenon, suggesting good quality of the resulting ZrO2/regrown-AlGaN interface. From the transfer characteristics, maximum drain current of 1100 mA/mm and maximum transconductance of 102 mS/mm were obtained.