Recessed gate GaN-based MIS-HEMTs with Al2O3 gate dielectric deposited by mist-CVD method

We report on the fabrication of recessed gate AlGaN/GaN metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMTs) with Al
2
O
3
gate dielectric deposited by mist-CVD method. The fabricated device exhibited a high positive threshold voltage of 1.5 V in combination of high maximum drain current of 450 mA/mm, demonstrating robust enhancement-mode operation.