High Linearity Ka-band GaN Hemt Low Noise Amplifier

This paper presents the design and measured results of Low Noise Amplifier, which operate in Ka-band. The LNA was designed using Gallium Nitride (GaN) compound semiconductor process. The designed LNA has a Noise Figure characteristic of 2.52-2.5 dB at 26.5-29.5 GHz with OP1dB of 10 dB. In the same band, the input/output reflection coefficient is characterized by 10 dB or less, and the gain is characterized by 19.3-20.2 dB. Layout is a total size of 3,080um x 1,645um.