A Read and Write Method for Forgetting Memristor Crossbar Array with Long-term and Short-term Memory

In this paper, time slot technology is designed based on the single forgetting memristor synapse with single voltage source to read and write the forgetting memristor crossbar array. The amplitude of the voltage source signal is used to set the corresponding long-term and short-term memory weights, and the circuit protection signal is used to improve the security of the nanoscale memristor crossbar array. By analyzing the forgetting properties of memristor synapses, the forgetting memristor crossbar array with long-term memory, short-term memory (LSM) and its corresponding read-write mode are demonstrated. Because the forgetting memristor crossbar array can store both long-term and short-term memories, the application of forgetting memristor crossbar array to image storage can show the spontaneous evolution of images.