Evaluation of high-voltage GAN transistor in 3-phase PFC circuit

The aim of this paper is evaluation of new 1200 V GaN power transistor technology within selected target application circuit. As a evaluating circuit, 3-phase PFC in dual interleaved topology was selected. Consequently, identification of commercially available 1200 V GaN structure was realized. Selected transistor was implemented withing PFC circuit and evaluated. Testing under nominal operational parameters revealed that developed 1200 V GaN power transistor has lack of performance to reliably operate at industrial application due to missed optimization and testing during development phase. Asa a result it was concluded that 1200 V GaN technology still requires additional research and development time to successfully compete robust SiC transistor structures.