Matching Network Efficiency: The New Old Challenge for Millimeter-Wave Silicon Power Amplifiers

Recently emerging applications in the millimeter-wave (mm-wave) frequency range, such as automotive radar, satellite communications, 5G, 6G, and beyond, have brought new and significant challenges to the implementation of microwave circuits and systems. Many of these, such as speed, power consumption, signal-handling capability, linearity, integration possibilities, and cost, are directly related to the choice of the semiconductor process technology. For the implementation of a sophisticated mm-wave front end, different technology options are available, mainly the group III–V semiconductors, silicon–germanium (SiGe) heterojunction bipolar transistor/bipolar CMOS (BiCMOS), or CMOS processes in their multiple variants
[1]
–

[3]
.