Current Mirrors on Complementary Field-Effect Transistors with a Control PN Junction for Low-Temperature and Radiation-Hardened Analog ICs

Current mirror (CMs) are the basis of many analog integrated circuits. In this case, the systematic component of the zero bias voltage and the input common-mode rejection ratio of operational amplifiers, comparators, etc. largely depends on the current gain (K
i
) of the CMs used in them, that is, the differences between K
i
and unity. The article presents the circuitry fundamentals of precision low-temperature CMs for JFET/ CJFET operational amplifiers, providing the ability to obtain both inverting and non-inverting K
i
values (+1, +2, +3, -1, -2). Non-inverting CMs with $\mathrm{K}_{\mathrm{i}}=1\div 3$ are in demand in active RC filters of the Sallen-Key class. Due to the use of JFET transistors, the proposed CMs operate in the low temperature range (up to -197°C), as well as with a neutron flux up to 10
¹⁴
n/cm
²
. Computer simulation of the developed CMs, performed in the LTSpice XVII environment on complementary field-effect transistors with a control pn junction of JSC “Integral” (Minsk, Republic of Belarus) and confirms the high precision of the considered CMs in a wide range of input currents.