Evaluating manufacturability of radiation-hardened SOI substrates

The goal of this work was to transfer a radiation-hardening process to a commercial SOI wafer manufacturer, optimize the process for manufacturing and wafer quality, and demonstrate that the process is compatible with commercial SOI wafers. Over the period of the project three types of SOI substrates were examined having BOX thicknesses between 100 and 200 nm, consistent with the state-of-the-art substrates in use by radiation-hardened SOI and commercial SOI substrate users. Two different regimes for silicon thickness were examined, one for partially depleted and one for fully depleted target applications.