Investigation of SOI sensitivity to SEU-Influence of the buried oxide coupling effect

Experimental measurements and 2D simulations have been used to investigate a capacitive effect through the buried oxide when charges are generated by a ionizing particle. This effect appears for a depiction in the substrate but is not sufficient to increase significantly the collected charge. An other mechanism such as a temporary conductive plasma path in the buried oxide is then necessary to increase the total collected charge in SOI drain region.