Direct method for bipolar base-emitter and base-collector capacitance splitting using high frequency measurements

This paper presents a new method based on HF measurements to determine the intrinsic and extrinsic base-emitter and base-collector junction capacitances parameters of bipolar transistors. After measuring the total junction capacitance, this method describes how to split the value between an intrinsic (C/sub ji/) and an extrinsic (C/sub jx/) part versus bias. From the resulting capacitance voltage behaviour, C/sub ji/(V) and C/sub jx/(V), the capacitance specific model parameters (C/sub j0/, V/sub j/, /spl gamma//sub 1/) can be extracted for the intrinsic as well as for extrinsic part. The results can be introduced in recent compact bipolar models such as the HICUM or MEXTRAM model.