A Sub-1 V, Electrolyte-Gated Vertical Field Effect Transistor Based on ZnO/AgNW Schottky Contact

Few works on solution-processed zinc oxide vertical transistors and electrolyte-gated transistors have shown the merits of both architectures. Here, we present an electrolyte-gated vertical field-effect transistor (EGVFET) based on a spray-deposited zinc oxide/silver nanowire (ZnO/AgNW) Schottky contact. The output curve shows that the device operates at a sub-1 V bias. Also, the electrolyte does not affect the diode cell, and the cyclic voltammetry of the capacitor cell does not indicate a faradic process between AgNW and the top-gate electrode. From the transfer curve, we extracted an
${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$
ratio of 10
⁴
, an on-current density of
65.3 mA/cm
²
and a normalized transconductance of
113.4 mS/cm
²
. Our contribution places the ZnO-EGVFET structure on the front line to develop printed transistors without a high-resolution pattern.