A new mobility model for pocket implanted quarter micron n-MOSFETs and below

A new, analytical, physically-based effective surface mobility model valid in all regimes of device operation from weak to strong inversion is introduced. The model accounts for all relevant scattering processes vs. the electric field and temperature as well as for the lateral nonuniform 2D doping profile in pocket implanted MOSFETs. Measurements show that the mobility degradation due to Coulomb scattering with ionized dopants in the heavily doped pocket implanted regions cause a reduction of the surface mobility of up to 30% at low gate-to-source overdrive voltage (V/sub GS/=V/sub th/+100-200 mV).