Benefits of implementing a duty-ratio controlled parallel-resonant converter with SiC MOSFETs instead of Si IGBTs

In this paper, the operation of a parallel resonant converter with a capacitive output filter that exploits the parasitic components of its transformer is described briefly. Measurements from a high power DC pulsed generator with Si IGBTs are obtained. Finally, the experimentally calculated losses of the Si IGBTs are compared with SiC MOSFETs’ losses using simulations of the system.