A 32-GHz Broadband mm-wave Power Amplifier in 45-nm SOI Technology

This paper presents a broadband millimeterwave (mm-wave) power amplifier (PA) in 45-nm SOI Technology. Based on the principle of magnetically-coupled resonance (MCR), an asymmetric magnetically-coupled resonator is implemented using a transformer-based structure, which effectively compensates the high-frequency gain of PA, and improves the gain flatness and bandwidth of PA. According to the simulation results, the 3-dB bandwidth of the PA is 11 GHz from 26 to 37 GHz. Besides, the PA achieves gain of 22.7 dB, P
SAT
of 20.8 dBm, and peak PAE of 34.3% at 32 GHz.