Influence of Silver Content in Glassy Matrix on Resistive Switching Behavior

Chalcogenide glasses with different silver concentrations were studied regarding switching behavior. Samples with two different concentrations of silver content
$x=10$
at. % Ag and
$x=15$
at. % Ag were synthesized with standard melt quenching route. Morphology of the studied samples was investigated using scanning electron microscopy, confirming that samples are phase separated. Prepared planar shaped
$\text{Ag} / \text{Ag}_{10}\left(\text{As}_{40} ~\mathrm{S}_{30} \text{Se}_{30}\right){ }_{90} / \text{Ag}$
and
$\text{Ag} / \text{Ag}_{15}\left(\text{As}_{40} ~\mathrm{S}_{30} \text{Se}_{30}\right)_{85} / \text{Ag}$
structures were used for measurements of current-voltage (I- V) response at room temperature. Experimentally obtained results revealed presence of bipolar switching mechanism in both investigated samples. Further, results showed that switch from high to low resistance state occurs at a low current values order of
$\mu \mathrm{A}$
desirable for low energy consumption. The ratio of resistances in OFF and ON states was found to be order of 10
²
for both prepared structures indicating their good potential for fabrication a device for non-volatile memory applications.