Study in multilayer wiring technology on high-heat-conduction substrates

Inorder to meet the requirements of high heat dissipation, high density and low coefficient of expansion for micro system miniaturization integration, a method for preparing BCB / Cu multilayer wiring based on AISi high thermal conductivity substrate is proposed. The surface treatment of A lSi substrate, the preparation of interface buffer layer of A lSi substrate film, and the through-hole interconnection of A lSi substrate dielectric film were studied. The AISi substrate multilayer wiring substrate samples were prepared, including three layers of BCB dielectric layer and four layers of thin film conductor wiring. After 100 temperature cycles from - 55 °C to 150 °C, the qualified rate of interconnection conduction and insulation test is 100%.