A 28-GHz Class-F Power Amplifier with 4096-QAM OFDM Under -36.2 dBc EVM in 28-nm CMOS Technology

A Ka-band 28-nm CMOS power amplifier (PA) has been proposed for 5G/B5G MMW high-speed applications. Under low supply voltage, 0.9-V, this PA achieves 22.5 dB of measured Gain, 37% Peak PAE and 12.3dBm OP1dB at 28 GHz. Besides, under 1024/4096-QAM OFDM digital modulation, this PA can maintain root-mean-square (rms) error vector magnitude (EVM) better than -35.35/-36.2 dB at 28 GHz.