Modeling Ni/beta-Ga2O3 SBD interface properties

In this work, Ni/beta-Ga2O3 Schottky diode deposited by electron-beam evaporation was studied. A detailed numerical simulation is carried out to reproduce the current-voltage measurement of Ni/beta-Ga2O3 Schottky diode and extract the Ni/beta-Ga2O3 interface properties. For more agreement between simulation and measurement the effect of Ni workfunction, Si-doped beta-Ga2O3 surface electron affinity and traps concentration were studied.