A Fully Integrated 3.5-/4.9-GHz Dual-Band GaN MMIC Doherty Power Amplifier Based on Multi-Resonant Circuits

In this article, a fully integrated dual-band gallium nitride (GaN) Doherty power amplifier (DPA) based on multi-resonant circuits (MRCs) is presented. A lumped T-type network in combination with the output capacitances of the main and auxiliary transistors is able to realize the quarter-wavelength transformer (QWT) in DPA, and its component values are totally decided by the operating frequency, given a certain characteristic impedance. MRCs are proposed to exhibit the required component values at two different frequencies. By replacing each component in the T-type network with an MRC, a dual-band QWT can be achieved. An integrated dual-band DPA is implemented in a commercial 0.25-
$\mu \text{m}$
GaN-HEMT process to validate the proposed method. The fabricated DPA shows a saturated output power of 43.8–44.7/44.4–44.8 dBm, a 6-dB back-off drain efficiency (DE) of 41%–46%/41.5%–47%, and a saturated DE of 49%–52%/56%–59% in 3.35–3.6/4.8–5.2 GHz, with a compact size of
$2.8\times3.5$
mm
²
. Applying a 100-MHz OFDM signal with a 7.8-dB peak-to-average power ratio (PAPR), an average efficiency of 37%/40% and an average power of 37/37 dBm are measured at 3.5/5.0 GHz, and the adjacent channel power ratio (ACPR) is better than −49 dBc after digital predistortion (DPD). To the best of our knowledge, the proposed DPA is the first demonstration of fully integrated dual-band GaN DPAs.