Low-Voltage Bandgap Reference Based on Deep Submicron Technology

With the advancement of semiconductor technology, integrated circuits have entered a deep submicron era, and its development continues to aim at the pursuit of high speed, high integration and low-power consumption. The bandgap reference source is the most important component unit in integrated circuits, and it is of great practical significance to realize the goal of a CMOS bandgap reference source circuit that can successfully operate under low power supply voltage. This paper implements a bandgap reference (BGR) circuit with high stability and low output applied to photoelectric readout circuits. Compared with the traditional BGR circuit that can only output a reference voltage of about 1. 2V, this paper implements a bandgap reference source with a high stable output less than 1V, where high stability is achieved by using low-voltage cascode current mirrors. The BGR circuit is implemented based on 0.18$\mu$m BCD process. The total current is 332$\mu$A at a 3. 3V power supply voltage, and the output reference voltage is 744mV. The temperature coefficient (TC) is 12.59 ppm$/^{\circ}$C over a wide temperature range of-40°C to 120°C, and at low frequencies, its power supply rejection ratio (PSRR) is as high as 92dB.