The Effect of Arsenic Doping on the Performance of CdSexTe1-x/CdTe Solar Cells

The effect of Arsenic doping in the CdSe
x
Te
1-x
(CST)/CdTe solar cells with different Se (x) compositions and processed under various CdCl
2
annealing temperatures has been investigated. The superstrate cell configuration was ITO/MZO/CST: As/CdTe/Back Contact. The CST was doped with Arsenic during the CSS deposition. The Se (x) composition of the CST was varied between_-6 and 27%. The V
oc
decreased and J
sc
increased at higher Se (x) compositions for both undoped and doped cells, due to a decrease in the bandgap of CST. For undoped cells, the maximum net p-doping was found to be around 3.20E+14 cm
^-3
for 22% Se composition, and for Arsenic doped cells 1.87E+15 cm
^-3
for 27% Se composition. The V
oc
for the Arsenic doped cell was found to be 30-40 mV lower than the undoped cells presumably due to lower minority carrier lifetimes.