Effect of voided germanium thin-films grown onto silicon substrate on dislocations evolution

High-quality germanium (Ge) epilayers on silicon (Si) with low threading dislocation density were achieved by sintering of porous Si/Ge films. The process consists of the formation of porous Ge nanostructures by dislocation-selective electrochemical etching of Si/Ge films, followed by high temperature treatment to generate a monocrystalline voided Ge layer. Subsequently the voids layer intercepts dislocations and prevents them from propagating to the Ge thin-film surface. A multiple slip crystal plasticity model coupled with finite element analysis is then applied to simulate a representative volume element of the Ge thin-film grown onto Si (001) surface which mimics the experimental approach.