Magnetoelectronic devices using /spl alpha/-Fe/sub 2/O/sub 3/ bottom GMR spin-valves

The characteristics of a magnetoresistive random access memory (MRAM) and a giant magnetoresistive (GMR) transpinnor, which is an active solid-state device, have been investigated using /spl alpha/-Fe/sub 2/O/sub 3/ bottom GMR spin-valves. Patterned /spl alpha/-Fe/sub 2/O/sub 3/ bottom GMR spin-valve devices exhibited excellent device performance, which is related to the high GMR ratio, high initial device resistivity, and good magnetic properties. The magnetic and electrical device testing results of MRAM and transpinnor suggest that they are potential candidates in high-density memories. The possibility of fabricating both an operating device (transpinnor) for the MRAM and a MRAM memory element on the same substrate offers the potential of reducing the real MRAM cell size.