One-step chemical vapor deposition of 3D-NbS2/2D-MoS2 metal/semiconductor junctions

3D-2D metal-semiconductor junctions composed of bulk NbS
2
and monolayer MoS
2
have been obtained from the one-step chemical vapor deposition method. The results of Raman and atomic force microscopy confirmed that the outer and the inner regions of the crystal are a bulk NbS
2
(metal) and a monolayer MoS
2
(semiconductor), respectively. The junctions showed clear rectifying characteristics, exhibiting self-organized formation of 3D metal/2D semiconductor Schottky junctions.