Extreme scaling enabled by MX2 transistors: variability challenges (invited)

2D materials are promising for logic applications at ultra-scaled channel lengths, but little is known about scaled 2D FET variability. We compare Vt variability in double-gated WS2 FETs and back-gated uncapped MoS
2
FETs and find that the latter have lower Vt variability, competitive with Silicon finFETs. We also investigate SS variability and demonstrate suppression of short-channel effects by scaling the oxide and MoS
2
thickness.