A Shunt Capacitive Switch based on RF MEMS Technology for 5G application: Design and Investigation

This paper present low insertion loss and high isolation based switching device. A shunt capacitive switch based on Radio Frequency MEMS technology is designed for achieving the above cited objectives. The device is designed for the frequency range from 24.25 GHz to 27.5 GHz (5G frequency band). The designed switch showed below -14 dB return loss, below -0.20 dB insertion loss and up to -41 dB isolation at 26 GHz. Silicon dioxide having a dielectric constant of 4 is used as a dielectric material. Silicon dioxide layer is deposited above the signal line of CPW to form a capacitor. Au is used for realizing the CPW transmission line and bridge structure. Further, the meanders are used in the switching structure in order to tune the design in the desired frequency range.