Modeling and Simulation of Charge Trapping in 1/f Noise, RTN and BTI: from Devices to Circuits

Modeling and simulation of charge trapping is discussed in the context of random telegraph noise (RTN), bias temperature instability (BTI) and low-frequency noise (1/f noise), aiming unified compact modeling. Analytical formulations for 1/f noise (frequency domain), RTN (time domain) and BTI have been derived, using a single modeling framework, where model parameters are the same in frequency and time domain. The area scaling of 1/f noise, RTN and BTI is discussed in detail, as well as its variability among devices that by design should be identical. The modeling addresses the time dependent variability in the electrical behavior of devices and circuits.