A CMOS Charge-Domain Global Shutter Pixel Characterization System

This paper presents a photosensitive active pixel readout test chip, targeted for use in the electro-optical characterization of various charge-domain global shutter test pixels. The proposed system employs a scalable 256x256 resolution pixel array and a column-parallel analog signal processing chain. For the purpose of accurate spatial and temporal noise measurements, a low-noise column-level PGA, 12-bit ADC with oversampling capabilities, and flexible row-driver control has been introduced. The presented system is designed under a 0.11um 1P4M FSI CMOS process and includes a 7T charge domain test pixel with HDR features. The presented pixel measurement data further supports the validity of the system which is further discussed.