Design and Optimization of 650V/60A Double-Sided Cooled Multichip GaN Module

Wide bandgap (WBG) semiconductors have become the ultimate choice for future high-performance power electronics energy conversion due to their superior material properties compared to traditional silicon power devices. Gallium nitride (GaN) high electron mobility transistor (HEMT) offers very fast switching capability enabling the designer to push switching frequency to the MHz range. Traditional device packaging becomes a limiting factor in fully harnessing the benefits offered by these advanced power devices, and thus, improved and advanced packaging structures are a must to bridge the gap between GaN devices and their applications. A co-design, co-optimization method has been followed to develop a double-sided cooled, gate driver integrated 650V/60A GaN half-bridge phase-leg power module. Power loop inductance and thermal resistance per die is optimized to 0.91 nH and 0.31°C/W which is verified using thermal simulation and experimental result.