An Inverse Method to Evaluate the Chip Temperature Distribution within Press Pack IGBT

Press Pack Insulated Gate Bipolar Transistor (PP IGBT) is quite famous for the high power applications but lacks in-depth reliability research, evaluation of chip temperature distribution will be more meaningful than classical virtual junction temperature for reliability assessment. In this paper, an inverse method combining the experimental measurement and numerical solution, called multi-current VCE (T) method is applied to evaluate the single chip temperature distribution within PPI in the power cycling test, which extends the capability in chip temperature measurement of the conventional VCE (T) method. Finally, the calculated results are verified by the designed experimental measurement.